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平面栅型FED的模拟研究 被引量:3

The Simulation Study of the Planar-gate FED
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摘要 采用ANSYS有限元分析软件对平面栅型场致发射显示器(FED)的阴极表面电场进行了模拟分析。通过研究栅极宽度、阴栅间隙及阴极宽度对阴极表面电场分布的影响,结果表明平面栅型FED为边缘发射型器件,阴极宽度的改变对阴极表面电场整体影响明显,而阴栅间隙是影响阴极边缘电场分布的主要因素。 The ANSYS finite element computation program is used for the simulation of the surface Electric-field intensity distribution of the cathode of the planar-gate field emission display (FED). With the study of the gate width, the gap between the gate and the cathode and the cathode width, it shows that the planar-gate FED is the edge emission device.The change of the cathode width can influence the surface electric-field intensity distribution of the whole cathode notibly, the most important factors upon the edge electric-field intensity distribution of the cathode is the gap between the gate and the cathode.
作者 张婷 郭太良
出处 《现代显示》 2009年第2期28-31,35,共5页 Advanced Display
关键词 平面栅型FED 电场模拟 场致发射 Planar-gate FED Electric-field simulation Field emission
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参考文献15

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