摘要
在聚对苯二甲酸乙二醇酯(PET)柔性衬底上采用直流磁控溅射技术制备了氧化铟锡(ITO)透明导电薄膜,研究了衬底温度、溅射功率和溅射压强等工艺条件对薄膜光电性能的影响,并利用原子力显微镜(AFM)表征了衬底及ITO薄膜的表面形貌。结果表明,在PET衬底温度50℃、溅射功率100W和溅射压强2.66×10-1Pa的条件下,可以得到低方阻(50Ω/□)和高透过率(>90%)的透明导电薄膜。以此柔性ITO衬底为阳极,制备了结构为PET/ITO/NPB/Alq3/Mg∶Ag的柔性有机电致发光器件,在驱动电压为13V时,器件的发光亮度达到了2834cd/m2。
Indium-tin oxide （ITO） film on flexible polyethylene terephthalate （PET） substrates were prepared by DC magnetron sputtering deposition method. The effects of substrate temperature, sputtering power and pressure on ITO film properties were investigated. The results shown that ITO films with a low square resistivity of 50 Ω/ and a high transmittance in visible region over 90% can be achieved at a DC power of 100 W, working pressure of 2.66 × 10^-1 Pa and substrate temperature of 50 ℃. Using the fabricated flexible ITO substrate as the anode, the organic light-emitting device consisting of PET/ITO/NPB/Alq3/Mg： Ag is fabricated. The obtained FOLEDs have a maximum luminance of 2 834 cd/m^2 at 13 V.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2008年第6期967-972,共6页
Chinese Journal of Luminescence
基金
国家杰出青年基金(60425101)
教育部新世纪优秀人才计划(NCET-06-0812)
电子科技大学中青年学术带头人计划(060206)资助项目
关键词
有机电致发光器件
柔性基板
氧化铟锡薄膜
直流磁控溅射
organic light-emitting devices （OELDs）
flexible substrate
ITO thin films
DC magnetron sputtering
