摘要
金刚石膜是一种具有巨大应用潜力的新型功能材料,但是它极高的硬度和化学稳定性使其难以被加工成型,因此如何对金刚石膜表面进行精确的图形化加工是实现制造金刚石器件的关键技术问题之一。在本研究中,我们用微波等离子体化学气相沉积法制备的金刚石厚膜,在其表面利用氢等离子体辅助刻蚀、铁薄膜的催石墨化作用下,对金刚石膜的形核面进行了选择性的刻蚀。结果表明,该方法具有较高的刻蚀速率(850℃,33.8μm/h),较高的刻蚀选择比,可以对CVD金刚石膜进行较精确的图形化刻蚀,还可通过调节铁薄膜的厚度来实现刻蚀深度的控制。对氢等离子体在整个过程中的作用进行了阐述。
CVD diamond is a promising functional material and has attracted increasing interest, but it is so extrahard and chemically stable that it is difficult to be etched and fabricated. Thus, the technique of pattern machining CVD diamond is one of the key techniques in realizing diamond devices manufacture. In this paper, the nucleation side of polycrystalline diamond thick films, deposited by microwave plasma enhanced chemical vapor deposition （MPCVD） , were selectively etched under the graphitization effect of iron thin film under hydrogen plasma enhancement. The results indicated that this method can selectively etch CVD diamond at
high etching rate （850 ℃, 33. 8μm/h） and high etching ratio. The etching depth can be controlled by adjusting the thickness of the etching iron fihn. The effect of hydrogen plasma in the whole processing is also demonstrated.
出处
《金刚石与磨料磨具工程》
CAS
北大核心
2008年第6期1-4,8,共5页
Diamond & Abrasives Engineering
基金
国家自然科学基金项目(50572075)
湖北省教育厅项目(Q20081505)
2008开放基金项目:(RGCT200801)
