摘要
This paper reports the DC steady-state voltage and current transfer characteristics and power dissipation of the Complimentary Metal-Oxide-Silicon （CMOS） voltage-inverter circuit using one physical Bipolar Field-Effect Transistor （BiFET） of nanometer dimensions. The electrical characteristics are numerically obtained by solving the five partial dif- ferential equations for the transistor structure of two MOS-gates on the two surfaces of a thin pure silicon base layer with electron and hole contacts on both ends of the thin base. Internal and CMOS boundary conditions are used on the three potentials （electrostatic and electron and hole electrochemical potentials）. Families of curves are rapidly computed using a dual-processor personal computer running the 64-bit FORTRAN on the Windows XP operating system.
本文报告了硅互补金属氧化层硅(CMOS)电压倒相电路的直流稳态电压和电流转移特性和功率耗散.这电路用一只实际的、纳米尺度的双极场引晶体管(BiFET)实现.通过数字求解五个偏微分方程,可获得这些电学特性.方程是基于这种器件结构:在薄纯硅基层的两表面上各有一个MOS栅,在这薄基的两端都有电子和空穴接触.内部条件和CMOS边界条件用于三种势(静电势和电子及空穴电化学势).用一台装有Windows XP-PRO下的64位FORTRAN语言的双核个人计算机,快速地计算出一系列曲线.
基金
the CTSAH Associates(CTSA)~~
