摘要
采用溶胶-凝胶法制备了掺锑二氧化锡薄膜电极,运用XRD、SEM、循环伏安等检测手段对薄膜电极进行了表征,并探讨了热处理温度对薄膜的元素组成、结构、物相、氧化能力的影响。以苯酚为目标降解有机物,研究了所制备的薄膜电极对有机物光电催化降解能力及矿化程度的影响。结果表明,焙烧温度对薄膜的微观结构、表面组成、导电能力及活性均有很大影响,不同温度焙烧制备的掺锑二氧化锡薄膜均为多晶结构的半导体;经一定温度焙烧后的电极表面具有不同程度的龟裂状裂纹,使电极表面积增大,活性点增多;当焙烧温度为450℃时,所制的掺锑二氧化锡薄膜电极电阻最小,氧化能力最强,且对目标有机物的降解效果最好。
The antimony doped SnO2 thin film electrode was prepared by the sol-gel method. The film dectrode was analyzed by means XRD, SEM, Cyclic Vohammetry. The effects of the calcination temperatures on the element composition, structure, phase and oxidizability were discussed. Taking phenol as target substrate for photoelectrocatalytie degradation experiments, the degradation rate of phenol and mineralization level under different calcinated electrodes were investigated. The results showed that the calcination temperature has large impact on micro-structure,surface composition,resistance and reactivity of the film,the structure of the SnO2 thin films caleinated at different temperature are in the form of multi-crystal. Many cracks appear on the surface of the film electrode after different calcination which increase the reaction area and activated spots. The film electrode of antimony doped SnO2 calcinated at 450℃ has lower resistance,strong oxidation,and favorite degradation effect.
出处
《材料开发与应用》
CAS
2008年第5期15-19,共5页
Development and Application of Materials
基金
国家自然科学基金资助项目(20476070
20771080)
山西省自然科学基金资助项目(20041020
20031024)
关键词
焙烧温度
掺锑二氧化锡
光电催化
苯酚
Calcination temperature
Antimony doped SnO2 electrode
Photoelectrocatalysis
Phenol
