摘要
利用正硅酸乙酯(TEOS)和氧氯化锆(ZrOCl2.8H2O)的水解反应并经高温煅烧后,在BiVO4晶体表面形成SiO2.ZrSiO4膜,以提高BiVO4的耐高温性。采用红外光谱仪、X射线衍射仪、差热分析仪对产品进行了表征,并得出结论:包覆SiO.ZrSiO膜后的BiVO晶体,其耐热温度由680℃提高到1000℃,并对包覆机理进行了探讨。
It was researched on SiO2 · ZrSiO4 coated BiVO4 for the hydrolysis reaction of TEOS and ZrOCl2 · 8H2O and calcination at high temperature to improve the high-temperature resistance of bismuth vanadate crystal, FT-IR, XRD and DTA were used to characterize the samples. The conclusion is that the SiO2 · ZrSiO4 coated BiVO4 crystal can improve the heat resisitance temperature from 680 ℃ to 1000 ℃. The coated mechanism is also researched.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2008年第5期1141-1144,共4页
Journal of Synthetic Crystals
基金
河北省科学技术研究与发展计划项目(No.05212701D)
关键词
钒酸铋
二氧化硅
硅酸锆
包覆
机理
bismuth vanadate
SiO2
ZrSiO4
surface coating
mechanism
