摘要
在90 nm工艺时代,接触孔工艺问题对于提升90 nm产品的成品率具有重要意义。基于在90 nm工艺中接触孔四周存在的较为严重的Cu扩散问题,通过失效分析,确定引起Cu扩散问题的主要原因是由于光刻胶残留造成的。通过合理的设计,优化了光刻胶清洗流程,最终达到成品率提升的目的。
In 90 nm and above technology process, the inline defect is very important to 90 nm yields. Now the copper diffuse issue around the contact hole is rather serious in 90 nm process. Base on failure analysis, it was found that the copper diffuse was induced by PR （photo resist） residue. So the SC1 （standard clean 1） wet batch experiments were done and optimized, and the solutions to reduce PR residue was found out, the product yield was improved.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第10期866-868,共3页
Semiconductor Technology
关键词
半导体制造
接触层
铜扩散
缺陷
semiconductor manufacturing
contact layer
copper diffuse
defect
