摘要
利用硅胶吸附解吸臭氧原理自制了臭氧浓缩装置，通过此装置制备的高浓度臭氧作为分子束外延制备Bi系氧化物薄膜的氧化源．在臭氧浓缩装置中，硅胶温度保持在-85℃左右，工作6h，可获得浓度（摩尔分数）高于95％的臭氧．当臭氧浓缩装置中压强保持在1．3×10^3Pa，该臭氧浓度可维持5h以上．X射线衍射结果表明，制备的高浓度臭氧在高真空条件下可将Cu氧化成CuO，并以此为氧化源利用分子束外延在MgO（100）衬底上制备了较高质量的Bi2Sr2CuO6＋x和Bi2Sr2CaCu2O8＋x薄膜．
Using the principle of silica gel adsorbed-desorbed ozone, a homemade ozone concentrating apparatus was devised, and the high-concentration ozone was used as oxide source in molecular beam epitaxy （MBE） to prepare Bi based oxide thin fili：ns. The concentration （molar fraction） of ozone reached above 95% when the silica gel was kept at about -85 ℃ for 6 h, and can be kept over 5 h when the pressure in concentrating apparatus kept 1.3 × 10^3 Pa. X-ray diffraction （XRD） demonstrated that the high-concentration ozone can oxidize Cu to CuO in high vacuum. Furthermore, the oxide source is good enough to prepare high-quality Bi2Sr2CuO6＋x and Bi2Sr2CaCu2O8＋x thin films on the MgO （100） substrates by MBE.
出处
《金属学报》
SCIE
EI
CAS
CSCD
北大核心
2008年第6期647-651,共5页
Acta Metallurgica Sinica
基金
国家自然科学基金50572013
关键词
臭氧
浓缩装置
Bi系氧化物薄膜
分子束外延
ozone, concentrating apparatus, Bi-based oxide thin film, molecular beam epitaxy （MBE）
