摘要
采用等温等压化学气相沉积技术,分别以CH3SiCl3-H2和SiCl4-CH4-H2为气源,在沉积温度1100和1000℃、压力101kPa条件下,制备了SiC薄膜.利用SEM和XRD、显微拉曼光谱、EDAX元素分析、HRTEM等测试技术对沉积薄膜的结构和组成进行了表征.结果表明,1100℃时,以CH3SiCl3-H2为气源沉积得到纯净的SiC薄膜,以β-SiC(111)面择优定向生长,由微米级的金字塔锥形结构组成,硅含量随着沉积温度降低而增加;以SiCl4-CH4-H2为气源沉积得到非晶态碳掺杂的SiC薄膜,碳含量随着沉积温度降低而增加.此外,以CH3SiCl3-H2为气源沉积的SiC颗粒平均粒径均比以SiCl4-CH4-H2为气源的粒径大.前者SiC薄膜的方块电阻在kΩ级以上,且随着沉积温度的下降急剧升高;后者1100℃时制备的薄膜的方块电阻在kΩ级以上,且随着沉积温度的降低而急剧下降,1000℃时降低到Ω级.
Thin film of SiC on porous cordiefite was prepared from CH3SiCl3-H2 and SiC14-CH4-H2 gaseous sources by isothermal and isobaric chemical vapor deposition （CVD） at the temperatures of 1100 and 1000 ℃ and ambient pressure. The as-deposited thin film was characterized with scanning electron microscopy, X-ray diffraction, Raman micro-spectrum, high-resolution transmission electron microscopy and EDAX elementary analysis. The results indicated that the surface morphology of SiC thin film deposited from CH3SiCl3-H2 source showed pyramid structure which was significantly different from that from SiCI4-CH4-H2 source. Pyramid structure revealed that （111） plane of β-SiC was the preferred orientation in the XRD pattern. In most cases, the average size of pyramid shaped particles deposited from CH3SiCl3-H2 source was bigger than that from SiCl4-Ch4-H2. The thin film deposited from CH3SiCl3-H2 source consisted of pure β-SiC phase, and its Si content increased with decreasing temperature. However, the SiC film from SiCl4-Ch4-H2 source was amorphous carbon-doped SiC. Its C content increased with decreasing temperature. Additionally, sheet resistance of the SiC film from CH3SiCl3-H2 source was above a kΩ scale, increasing with temperature decreasing, while that from SiCl4-CH4-H2 source decreased rapidly with decreasing temperature. Sheet resistance of the SiC film deposited at 1100℃ from SiC14-CH4-H2 source was above a kΩ scale, falling to a Ω scale at 1000 ℃.
出处
《过程工程学报》
EI
CAS
CSCD
北大核心
2008年第3期589-594,共6页
The Chinese Journal of Process Engineering
基金
中国科学院百人计划基金资助项目
关键词
化学气相沉积
Β-SIC
堇青石
表征
chemical vapor deposition
β-SiC
cordierite
characterization
