摘要
利用电子束蒸发技术在常温下制备ITO透明导电膜,在这种条件下很难得到性能良好的透明导电膜,试图通过研究快速光热退火下退火温度、退火时间对其性能的影响,致力于在低温退火工艺下改善薄膜性能。通过对退火后样品禁带宽度的计算得出随着退火温度或退火时间的增大,禁带宽度逐渐增大;对样品的微结构分析发现随着退火温度的提高或退火时间的延长,样品的微结构致密性提高,各晶向面间距和晶格常数逐渐趋于标准的晶体;但退火温度过高或退火时间过长反而不利于透明导电膜性能的提高,所以选取合适的退火温度和退火时间是光退火下透光性和导电性都得到提升的关键。在200°C的退火温度下,退火12 m in可实现样品的透光率在可见光范围内达到82%,电阻率ρ=2.3×1-0 3Ω.cm。
It is difficult to obtained good thin films when tin-doped indium oxide （ITO） is prepared by electron beam evaporation on glass substrates at room temperature. In order to improve the properties, these samples were annealed by the rapid optical annealing under different annealing temperature and times, then the effect of the annealing conditions on the photoelectric properties and the microstructure of ITO films were studied. It shows that the Eg increases with increasing of annealing temperature and times, the microstructure is more compact and the d-value is more closed to standard d-value. Also, we have found that the higher annealing temperature or longer annealing times are disadvantage to advance the properties of ITO thin films, so it is crucial to choose a suitable annealing condition. The high quality of ITO films With the resistivity of 2.3 × 10^-Ω·cm and the transmittance of 82% were obtained under the optimized annealing condition of 200 ℃and 12 min.
出处
《光电子技术》
CAS
2008年第1期60-64,共5页
Optoelectronic Technology
关键词
快速光退火
ITO透明导电膜
电子束蒸发
光电性能
rapid optical annealing
ITO
electron beam evaporation
photoelectrical proper ties
microstructure
