摘要
采用射频磁控溅射法在Si(100)和Si(111)基片上沉积的六角铁氧体(Zn1-xCox)2W薄膜,利用XRD(X射线衍射仪)物相分析证明Si(111)基片有利于C轴垂直膜面生长,且在950℃退火时,薄膜结构较好。SEM(扫描电镜)分析表明,晶粒尺寸随着温度升高而变大,950℃退火时薄膜出现六角结构,温度过高出现缺陷;而Si(100)基片上的薄膜在950℃退火时则出现大的裂痕,这影响薄膜的磁性能。采用VSM(振动样品磁强计)测量了垂直膜面饱和磁化强度Ms⊥,在950℃退火时,Si(111)基片上的薄膜垂直饱和磁化强度较大。
（Zn1-xCox）2-W films on substrate Si（100） an tron sputtering using a composite target. It was certi d fi Si（111） were prepared by radio frequency magne ed that Si（111） substrate was more helpful than Si（100） for growing C-axis orientation perpendicular to the film plane by XRD （X-ray diffraction instru ment）, and film structure was fairly good after annealing at 950℃. SEM （s dicated, that the crystallite dimension became big with the rising temperat cann ure ing electricity mirror） in hexagonal structure ap （vibrating sample magnet ometer） was used to measure the perpendicularity saturation magnetization, and it showed that the perpendicularity saturation magnetization of the film on Si（111）was bigger after anneal at 950℃.
出处
《青岛大学学报（工程技术版）》
CAS
2008年第1期72-76,共5页
Journal of Qingdao University(Engineering & Technology Edition)
关键词
六角铁氧体薄膜
相结构
饱和磁化强度
hexagonal ferrites film
microstructure
saturated magnetization
