摘要
分析了硅基螺旋电感的集总π模型,讨论了高频下衬底对Q值的影响,并用Matlab仿真了Q值随几何尺寸改变而变化的情况。对于0.35μm CMOS工艺,铜制电感的Q值比同等条件下铝制电感高38.5%,另外增加连线金属的厚度可以有效提高Q值。
A lumped physical model of spiral inductor on silicon is analyzed,and the substrate losses at high frequency are considered. The impacts of different geometric dimensions to Q are simulated by Matlab. In addition, quality factor of copper inductor is much better than that of aluminum one, and Q value can also be improved by increasing the thickness of metal.
出处
《微处理机》
2008年第1期25-27,30,共4页
Microprocessors
关键词
电感
π模型
Q值
谐振
衬底损耗
Inductor
π model
Quality factor
Resonance
Substrate loss
