期刊文献+

基于锗硅异质纳米晶的非易失浮栅存储器的存储特性

Charge Storage Characteristics of Nonvolatile Floating-Gate Memory Based on Gradual Ge_(1-x)Si_x/Si Heteronanocrystals
下载PDF
导出
摘要 利用自组织生长和选择化学刻蚀方法在超薄SiO2隧穿氧化层上制备了渐变锗硅异质纳米晶,并通过电容-电压特性和电容-时间特性研究了该纳米结构浮栅存储器的存储特性.测试结果表明,该异质纳米晶非易失浮栅存储器具有良好的空穴存储特性,这是由于渐变锗硅异质纳米晶中Ge的价带高于Si的价带形成了复合势垒,空穴有效地存储在复合势垒的Ge的一侧. Gradual Ge1-xSix/Si hetero-nanocrystals on ultrathin SiO2 layers were fabricated by combining self-assembled growth and the selective chemical etching method. Charge storage characteristics of nonvolatile floating-gate memory based on gradual Ge1- x Six / Si hetero-nanocrystals have been fabricated and investigated through capacitance-voltage (C-V) and capacitance-time (C-t) measurements. The findings indicate that holes reach a longer retention time in gradual Ge1-x Six/Si hetero-nanocrystals,which can be attributed to the holes trapped solidly on the side of the higher valence band of the compound potential barrier caused by the offset between Ge and Si.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第4期770-773,共4页 半导体学报(英文版)
基金 国家自然科学基金(批准号:60225014 90606021 60676006) 国家重点基础研究发展规划(批准号:2006CB0L1000)资助项目~~
关键词 异质纳米晶 非易失浮栅存储器 电容-电压特性 自组织生长 选择化学刻蚀 hetero-nanocrystals nonvolatile floating-gate memory capacitance-voltage measurement self-assembled growth selective chemical etching
  • 相关文献

参考文献18

  • 1Tiwari S, Rana F, Hanafi H, et al. A silicon nanocrystal based memory. Appl Phys Lett, 1996,68 : 1377. 被引量:1
  • 2Shi Y,Saito K, Ishikuro H, et al. Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals. J Appl Phys, 1998,84 : 2358. 被引量:1
  • 3Choi W K, Chim W K, Heng C L, et al. Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal-insulator-semiconductor structure. Appl Phys Lett,2002,80:2014. 被引量:1
  • 4JungJ H, Kim J H, Kim T W, et al. Nonvolatile memory cell effect in multilayered Ni1-x Fex self-assembled nanoparticle aays in polyimide. Appl Phys Lett, 2006,89 : 022112. 被引量:1
  • 5JungJ H, Kim J H, Kim T W, et al. Nonvolatile memory cell effect in multilayered Ni1-x Fex self-assembled nanoparticle aays in polyimide. Appl Phys Lett, 2006,89 : 022112. 被引量:1
  • 6Yeh P H,Chen L J,Liu P T,et al. Nonvolatile memory devices with NiSi2/CoSi2 nanocrystals. J Nanosci Nanotechnol, 2007, 7 : 339. 被引量:1
  • 7Choi S,Cha Y K, Seo B S,et al. Atomic-layer deposited IrO2 nanodots for charge-trap flash-memory devices. J Phys D, 2007,40: 1426. 被引量:1
  • 8Chen J H, Yoo W J, Chan D S H, et al. Self-assembly of Al2O3 nanodots on SiO2 using two-step controlled annealing technique for long retention nonvolatile memories. Appl Phys Lett, 2005, 86:073114, 被引量:1
  • 9Huang S Y, Arai K, Usami K, et al. Toward long-term retentiontime single-electron-memory devices based on nitrided nanocrystalline silicon dots. IEEE Trans Nanotechnol,2004,3:210. 被引量:1
  • 10Lee C, Hou T H, Kan E C C. Nonvolatile memory with a metal nanocrystal/nitride heterogeneous floating-gate. IEEE Trans Elec tron Devices, 2005,52 : 2697. 被引量:1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部