摘要
利用自组织生长和选择化学刻蚀方法在超薄SiO2隧穿氧化层上制备了渐变锗硅异质纳米晶,并通过电容-电压特性和电容-时间特性研究了该纳米结构浮栅存储器的存储特性.测试结果表明,该异质纳米晶非易失浮栅存储器具有良好的空穴存储特性,这是由于渐变锗硅异质纳米晶中Ge的价带高于Si的价带形成了复合势垒,空穴有效地存储在复合势垒的Ge的一侧.
Gradual Ge1-xSix/Si hetero-nanocrystals on ultrathin SiO2 layers were fabricated by combining self-assembled growth and the selective chemical etching method. Charge storage characteristics of nonvolatile floating-gate memory based on gradual Ge1- x Six / Si hetero-nanocrystals have been fabricated and investigated through capacitance-voltage (C-V) and capacitance-time (C-t) measurements. The findings indicate that holes reach a longer retention time in gradual Ge1-x Six/Si hetero-nanocrystals,which can be attributed to the holes trapped solidly on the side of the higher valence band of the compound potential barrier caused by the offset between Ge and Si.
基金
国家自然科学基金(批准号:60225014
90606021
60676006)
国家重点基础研究发展规划(批准号:2006CB0L1000)资助项目~~
关键词
异质纳米晶
非易失浮栅存储器
电容-电压特性
自组织生长
选择化学刻蚀
hetero-nanocrystals
nonvolatile floating-gate memory
capacitance-voltage measurement
self-assembled growth
selective chemical etching