摘要
三维集成是当前集成电路技术研究的热点之一,就三维集成的基本结构——SOMOS结构的低频和高频电容-电压特性进行了研究,建立了解析模型,并利用二维半导体器件仿真软件SILVACO对模型进行了验证,二者吻合良好。而后借助该模型,对不同的偏置条件下的低频和高频电容—电压特性的物理机理进行了探讨,证实了通过电容-电压特性法对三维堆叠结构进行无损表征的可行性。
Three-dimensional integration is of great interest to IC technology currently. Low and high frequency capacitance-voltage characteristics of the SOMOS structure, the basic investigated. An analytical model is proposed and verified using SILVACO. The results show that both are in good agreement. Based stack structure properties in 3 D integration, are the two-dimensional semiconductor simulator on the model, the physical mechanism of low and high frequency capacitance-voltage characteristics under various bias are researched. This work contributes to the non-destroyed characterization of the 3D stack structure in 3D integrations.
出处
《电子器件》
CAS
北大核心
2014年第5期822-825,共4页
Chinese Journal of Electron Devices
基金
国家自然科学基金项目(61076073)
教育部博士点基金项目(20133223110003)
关键词
三维集成
SOMOS
电容—电压特性
表征
three-dimensional integration
SOMOS
capacitance-voltage characteristics
characterization
