摘要
采用改进布里奇曼法生长出外观完整的AgGa1-xInxSe2（x=0.2）单晶锭,晶体的红外透过率低,不能直接用于红外非线性光学器件制备。采用TA公司生产的SDTQ-600热分析仪进行DSC-TGA测试,发现其熔点为826.69℃,结晶点为750.86℃,总失重约为3.9217%。采用同成份粉末源包裹晶体,在抽空封结后进行退火处理。退火处理后晶体的红外透过率有明显改善。在4000 cm^-1～7000 cm^-1范围内红外透过率由原先低于25%改进到高于40%;在750 cm^-1～4000 cm^-1范围的红外透过率由原先低于45%改善到超过50%,在2000 cm^-1～750 cm^-1区域甚至高达60%。结果表明：采用同成分粉末源包裹,在抽空封结后退火处理能有效提高AgGa1-xInxSe2晶体的红外透过率,改善晶体的光学均匀性,退火后的晶体适合红外非线性光学器件制备。
An integral AgGa1-xInxSe2 （x = 0.2） single crystal was obtained by the modified Bridgman method. The crystal can not be directly used to make infrared nonlinear optical apparatus as the value of infrared transmission was too low. By the method of DSC-TGA with the SDTQ-600 produced by TA corporation, it was observed that the melting and freezing points of AgGa1-xInxSe2 （x = 0.2） were 826. 69℃ and 750. 86℃ respectively and the total lost weight was about 3. 9217%. The crystal was surrounded by the AgGa0.sIn0.2Se2 powder and sealed in vacuum to anneal. It was found that the infrared transmission was sharply improved after annealing treatment. From 4000cm^- 1 to 7000cm^- 1 the infrared transmission was improved from below 25% to above 40%. From 750cm^-1 to 4000cm^-1 the infrared transmission was improved from below 45% to above 50% and the infrared transmission was improved to 60% from 750cm^- 1 to 2000cm^-1. The results proved that the method surrounded by the same component powder and sealed in vacuum to anneal was an effective treatment method. It can effectively improve the infrared transmission of AgGa1-xInxSe2 crystal and homogenize the optical properties. The annealed crystal can be used to make infrared nonlinear optical apparatus.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2008年第1期52-55,共4页
Journal of Synthetic Crystals
基金
教育部博士点基金项目(No.20040610024)
