摘要
采用固相反应法制备了Bi2(Zn1/3Nb2/3)2O7(BZN)微波陶瓷,并借助XRD、SEM及LCR4284测试仪,研究了Sn4+取代Nb5+对BZN陶瓷显微结构和介电性能的影响。结果表明:随着Sn4+替代量的增加,微观形貌中出现棒晶;选取20～80℃,100 kHz时的εr计算,介电常数温度系数由205×10–6/℃逐渐减小到–240×10–6/℃;当替代量x(Sn4+)为0.16时,样品出现介电弛豫现象;随着测试频率的增加,介电弛豫峰向高温移动。
The Bi2（Zn1/3Nb2/3）2O7 microwave ceramics were prepared by traditional solid phase reaction. Effects of substitution of Sn^4＋ for Nb^5＋ on and the microstructure and dielectric properties of Bi2O3-ZnO-Nb2O5-based ceramics were investigated by XRD and SEM etc. The results show that with increasing of Sn^4＋ amount, some club-shaped crystals appear; the temperature coefficient of permittivity gradually decreases from 205×10^-6/℃ to -240×10^-6/℃ at 100 kHz and 20-80 ℃ A typical dielectric relaxation behavior is observed for Bi2Zn2/3Nb7/6Sn1/6O7 sample at x（Sn^4＋） =0.16. With the increase of testing frequency, the relaxation peak for the dielectric constant moves to high temperature.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2008年第1期32-34,共3页
Electronic Components And Materials
基金
四川省教育厅科技基金资助项目(2006C025)
