摘要
采用0.5μm GaAs PHEMT工艺,研制了一种PIN光探测器和分布放大器单片集成850nm光接收机前端。探测器光敏面直径为30μm,电容为0.25pF,10V反向偏压下的暗电流小于20nA。分布放大器-3dB带宽接近20GHz,跨阻增益约46dBΩ;在50MHz^16GHz范围内,输入、输出电压驻波比均小于2;噪声系数在3.03~6.50dB之间。单片集成光接收机前端在1.0和2.5Gb/s非归零(NRZ)伪随机二进制序列(PRBS)调制的光信号下得到较为清晰的输出眼图。
The front end of an 850 nm monolithic integrated optical receiver has been developed with 0.5 μm GaAs PHEMT process,which comprises a PIN photodetector and a distributed amplifier. The photodetector has a diameter and capacitance of 30 μm and 0.25 pF, respectively,as well as a dark current of less than 20 nA under the reverse bias of 10 V. The distributed amplifier has a -3dB bandwidth close to 20 GHz,with a transimpedance gain of 46 dB Ω,; In the range of 50 MHz- 16 GHz,both the input and output voltage standing wave ratios are less than 2; The noise figure varies from 3.03 to 6.5 dB within the bandwidth. The monolithic integrated optical receiver front end output eye diagrams for 1 Gb/s and 2. 5 Gb/s NRZ pseudorandom binary sequence （PRBS） are clear and satisfying.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2008年第2期191-195,共5页
Journal of Optoelectronics·Laser
基金
国家自然科学基金资助项目(60277008)
单片集成电路与模块国家重点实验室基金资助项目(51491050105DZ0201)
关键词
PIN光探测器
分布放大器
光接收机
眼图
PIN photodetector
distributed amplifier
optical receiver
eye diagram
