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5Gb/s GaAs MSM/PHEMT单片集成光接收机前端 被引量:1

5 Gb/s GaAs MSM/PHEMT Monolithic Integrated OpticalReceiver Front End
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出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2006年第3期426-426,共1页 Research & Progress of SSE
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  • 1崇英哲,黄辉,王兴妍,王琦,黄永清,任晓敏.高性能pin/HBT集成光接收机前端设计[J].半导体光电,2003,24(4):248-250. 被引量:4
  • 2敖金平,刘伟吉,李献杰,曾庆明,赵永林,乔树允,徐晓春,王全树.单片集成长波长光接收机[J].半导体光电,2002,23(1):26-28. 被引量:3
  • 3孙长征,熊兵,王健,蔡鹏飞,田建柏,罗毅,刘宇,谢亮,张家宝,祝宁华.10Gb/s EML Module Based on Identical Epitaxial Layer Scheme[J].Journal of Semiconductors,2005,26(4):662-666. 被引量:1
  • 4焦世龙,陈堂胜,钱峰,冯欧,蒋幼泉,李拂晓,邵凯,叶玉堂.5Gb/s单片集成GaAs MSM/PHEMT 850nm光接收机前端[J].Journal of Semiconductors,2007,28(4):587-591. 被引量:2
  • 5Lee C P,Margalit S,Ury I,et al.Integration of an injection laser with a gunnoscillator on a semi-insulating GaAs substrate[J].Appl Phys Lett,1978,32 (12):806-807. 被引量:1
  • 6Yust M,Bar-Chaim N,Izadpanah S H,et al.A monolithically integrated optical repeater[J].Appl Phys Lett,1979,35(10):795-797. 被引量:1
  • 7Nakano H,Yamashita S,Tanaka T,et al.Monolithic integration of laser diodes,photomonitors and laser driving and monitoring circuits on a semi-insulating GaAs[J].Journal of Lightwave Technology,1986,4 (6):574-582. 被引量:1
  • 8Hornung J,Wang Z G,Bronner W,et al.7.4Gbit/s monolithieally integrated GaAs/AIGaAs laser driver structure[J].Electronics Letters,1993,29 (19):1694-1696. 被引量:1
  • 9Suzuki N,Furuyama H,Hirayama Y,et al.Highspeed operation of 1.5μm GaInAsP/InP optoelectronic integrated laser drivers[J].Electronics Letters,1988,21(8):467-468. 被引量:1
  • 10Daniel Yap,Kenneth R Elliot,Young K Brown,et al.High-speed integrated optoelectronic modulation circuit[J].IEEE Photonics Technology Letters,2001,13(6):626-628. 被引量:1

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