摘要
H＋离子注入Si片并经一定条件退火，可在Si片中形成埋层微空腔（microcavity）层，结合Si片键合技术，用智能剥离（Smart－cut）技术成功地制备了Unibond－SOI材料，并用扩展电阻（SRP）、卢瑟福背散射（RBS／C）和剖面透射电子显微镜（XTEM）等初步分析了其结构和电学性质．
The buried microcavity layer can be formed when silicon implanted with H+ ion is annealed at suitable condition. With silicon wafer bonding technology, the Unibond-SOI materials have been successfully fabricated by Smart-cut process. The structural and electrical properties are preliminary analyzed by spreading resistance probe (SRP), Rutherford backscattering spectrometry and channeling (RBS/C) and cross-section transmission electron microscopy (XTEM).
关键词
SOI制备技术
硅片
离子注入
键合
分离
Hydrogen
Ion implantation
Semiconducting silicon
Silicon on insulator technology
Silicon wafers
