摘要
报道用金属有机汽相外延技术(MOVPE)生长GaAs/Al_xGa_(1-x)As超晶格结构材料及其光电器件应用,用横断面透射电子显微术(XTEM)表征外延层结构.在自电光效应光学双稳态器件(SEED)中,超晶格层-层之间界面清晰,厚度均匀,周期性完整.对某些用超晶格作缓冲层的高电子迁移率晶体管(HEMT)结构,观察到超晶格对生长面的平滑作用及间断生长造成的界面等.
MOVPE growth of GaAs/Al_xGa_(1-x)As superlattices and their applications inrelative photoelectric devices are reported. Epilayer quantum heterostructures are charac-terized by using cross-sectional transmission electron microscopy (XTEM). In SelfElectrooptic Effect Devices (SEED), the superlaltice interfaces are abrupt and the barrierand well layers keep good uniformity. In some High Electron Mobility Transistors(HEMT), superlattices used as buffer layers smooth out the growing surface roughness.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1992年第2期139-144,共6页
Journal of Infrared and Millimeter Waves
基金
国家自然科学基金
关键词
MOVPE
XTEM
半导体
砷化镓
MOVPE, GaAs/Al_xGa_(1-x)As superlattices, XTEM, interfaces, smoothing effect.
