摘要
为了从微观领域研究金属薄膜缺陷的形成和薄膜的初期生长模式,利用有限元法对金属薄膜沉积过程中的缺陷和生长模式进行了计算机模拟.以Pt原子为膜料粒子,采用刚性球入射到石墨基底,重点研究了在基底上形成的缺陷结果表明,在薄膜生长初期会形成"树桩"小岛,而当碳基底上沉积铂原子的能量值达到75 eV时,就有可能发生随机原子注入."树桩"小岛的形成使薄膜生长多为岛状生长机制,同时检验了有限元方法在微观领域中的合理性和适用性.
To completely understand film defects formation and mechanism of film growth during metal nanometer film deposition, the defects and growing models were simulated and calculated through finite element method （FEM）. The reasons and factors of forming disorder, such as holes and interval atoms, were mainly discussed. The simulation result showed that during the early stage of metal film grouth, the ＂ stump＂ island shoped. When the deposition Pt atoms energy was 75 eV, random atom transfusion into graphite substrate would happened. And the＂ stump＂ island model led to an island growth mechanism for film growth thus verified the rationality and suitability of FEM in micro-fields.
出处
《材料科学与工艺》
EI
CAS
CSCD
北大核心
2007年第6期827-830,共4页
Materials Science and Technology
基金
国家自然科学基金资助项目(50001003)
关键词
薄膜缺陷
薄膜生长模式
有限元
计算机模拟
thin film disorder
film growth model
finite element method
computer simulation
