摘要
在电容式耦合等离子体化学气相沉积系统中，用高氢稀释硅烷和氮气为反应气氛制备纳米硅氮（ｎｃ－ＳｉＮｘ：Ｈ）薄膜结果表明：当Ｎ＿２／ＳｉＨ＿４气体流量比（Ｘｎ）从１增加为４时，薄膜的晶态年从５８％降至１４％，晶粒尺寸从１０ｎｍ降至５ｕｍ，Ｎ／Ｓｉ含量比从０．０３增至０．１２．当Ｘｎ≥５，则生成非晶硅氮（ａ－ＳｉＮｘ：Ｈ）薄膜．当Ｘｎ从１增加为１０时，薄膜暗电导率从１０￣（－５）（Ωｃｍ）￣（－１）降至１０￣（－１１）（Ωｃｍ）￣（－１），具有逾渗行为，这与薄膜的晶态率紧密相关．
Undoped nanocrystalline silicon nitrogen(nc-SiNx:H)films were prepared by rf glow discharge of heavily hydrogen(H2)diluted silane(SiH4) and nitrogen (N2).The volume fraction of the crystalline phase and mean grains size were varied from 58%-14% and 10nm-5um respectively when the gas volume ratio of N2 / SiH4 is increased from 1 to 4,connected with the N / St content ratio increasing from 0.03 to 0. 12 (the substrate temperature 320℃ and the rf power 70W).When the gas volume ratio of N2/ SiH4 is larger than 5,the deposited films are amorphous.The dark conductivity varied from 10￣(-5) to 10￣(-11)(Ω cm)￣(-1)of nc-SiNx:H films are of percolation behaviour, which is strongly connected with the degree of crystallization.
出处
《材料研究学报》
EI
CAS
CSCD
1996年第3期289-292,共4页
Chinese Journal of Materials Research
关键词
纳米
硅氮薄膜
晶态率
晶粒尺寸
nanocrystalline silicon nitrogen crystallization ratio mean grains size dark conductivity
