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远紫外光刻现状及未来 被引量:1

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摘要 简要评述光学光刻技术由035μm工艺向025μm工艺转移中所面临的挑战,及远紫外光刻技术在器件制造中的地位。
作者 童志义
出处 《电子工业专用设备》 1997年第2期5-11,共7页 Equipment for Electronic Products Manufacturing
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