摘要
Numerical analysis and simulation have been an effective means to develop the advanced growth technology and to control the defects type, size and density for silicon crystals of 300 mm and beyond. In the present paper, numerical analysis of the melt flow in the Czochralski （CZ） crystal growth configuration, the three dimensional （3D） modeling, the simulation of melt flow under the magnetic field, the inverse modeling and the time-dependent simulation are reviewed. Finally, comparison of numerical analysis with experimental measurements is discussed.
Numerical analysis and simulation have been an effective means to develop the advanced growth technology and to control the defects type, size and density for silicon crystals of 300 mm and beyond. In the present paper, numerical analysis of the melt flow in the Czochralski （CZ） crystal growth configuration, the three dimensional （3D） modeling, the simulation of melt flow under the magnetic field, the inverse modeling and the time-dependent simulation are reviewed. Finally, comparison of numerical analysis with experimental measurements is discussed.
基金
the International Scientific and Technical Corporation Major Planning Project (No. 2005DFA5105).
