摘要
采用STR公司研发的专业晶体生长软件CGSim,对热场内的导流筒部件的底部结构进行优化。研究了导流筒底部的两个结构:一是导流筒底部水平结构长度(X值);二是导流筒底部结构倾斜长度(Y值)。研究结果表明,通过调整导流筒底部的结构,改变了熔体内的温度分布,增大了自由液面下方的对流强度,加快了氧杂质的挥发,降低了氧杂质传输分凝到晶棒的氧含量。结果表明,随着X值增加,生长界面的氧含量就越低;随着Y值增加,生长界面的氧含量无明显变化。由此得知,导流筒底部X值是影响晶棒生长界面氧含量的关键结构;而Y值对氧含量影响作用较弱。模拟结果显示,当X值为160 mm时,氧含量最大降低0.57 ppma。
By using the professional crystal growth software CGSim developed by STR company,it was optimized that the bottom structure of the guide tube components in the thermal field.Mainly we studied two structures at the bottom of the guide tube,the first was the horizontal structure length(X value)at the bottom of the guide tube,the second was the inclined length(Y value)of the bottom structure of the guide tube.The research results indicated that by adjusting the structure at the bottom of the guide tube,the temperature distribution inside the melt was changed,the convective intensity below the free liquid surface was increased,the volatilization of oxygen impurities was accelerated,and the oxygen content of oxygen impurity transport and condensation to the crystal rod was reduced.The results showed that as the X value increased,the oxygen contents at the growth interface decreased.As the Y value increased,there was no significant change in the oxygen content at the growth interface.It could be inferred that the X value at the bottom of the guide tube was the key structure that affecting the oxygen content at the growth interface of the crystal rod,and the influence of Y value on oxygen content was relatively weak.The simulation results showed that when the X value was 160 mm,the oxygen content decreased by a maximum of 0.57 ppma.
作者
王新强
景华玉
王小亮
刘利国
周涛
万军军
张正
WANG Xinqiang;JING Huayu;WANG Xiaoliang;LIU Liguo;ZHOU Tao;WAN Junjun;ZHANG Zheng(Shuangliang Silicon Material(Baotou)Co.,Ltd.,Baotou 014060,China)
出处
《新技术新工艺》
2024年第3期63-66,共4页
New Technology & New Process
关键词
导流筒
氧杂质
生长界面
分凝
自由液面
guide tube
oxygen impurities
growth interface
segregation
free liquid level
