摘要
研究了不同条件下的退火对高Al组分AlGaN P-I-N二极管性能的影响。研究结果表明,合适的退火条件既能使AlGaN与电极之间形成良好的欧姆接触,同时又能显著降低AlGaNP-I-N二极管的反向漏电流,反偏压5V时,暗电流密度由2.0×10-1A/cm2降为5.7×10-5A/cm2,串阻由18.01kΩ减小到1.071kΩ,从而优化了AlGaN P-I-N二极管的I-V特性。分析认为这与退火改善接触电极特性,同时消除器件制备工艺中引入的损伤、降低缺陷态密度有关。
Effect of the different annealing conditions on the Ⅰ-Ⅴcharacteristics of AlGaN with high Al fraction P-I-N photodiodes has been investigated. The result shows, by using an optimised annealing process, not only a good ohmic contact between AlGaN and metal electrode has been obtained, but also the reverse current of the AlGaN P-I-N diode was reduced apparently. At -5V bias, the dark current density and series resistance of diode decreased from 2.0 × 10^-1A/cm^2 to 5.7 × 10^-5A/cm^2 and from 18.01kΩ to 1. 071kΩ individually. Ⅰ-Ⅴ characteristic of AlGaN P-I-N device shows improved. It is believed the improvement relates with optimizing of contact properties, elimination of damage induced by device technics and reduction of defect density during annealing process.
出处
《激光与红外》
CAS
CSCD
北大核心
2007年第12期1283-1286,共4页
Laser & Infrared
