摘要
用直流磁控溅射方法在硅衬底上制备氮化铝薄膜。X射线衍射仪和X射线光电子能谱仪分析了薄膜的结构和成分;椭圆偏振仪测量并拟合获得AlN薄膜在250～1000nm波长范围内的折射率和消光系数曲线;利用大荷载划痕仪的声发射谱检测方法并结合不同压力下的划痕显微形貌观察得到薄膜临界载荷(结合力)L为29.45N。
Aluminum nitride thin film was deposited on Si substrate by using a reactive DC magnetron sputtering system. Structure and component of the AlN film were studied by X-ray diffraction and X-ray, photoelectron spectroscopy corresponding. Optical constants （refractive index and extinction coefficient） of AlN film were obtained from the spectroscopic ellipsometry study in the wavelength range of 250- 1000nm. The acoustic emission curve and the scratching micrographs with different force were confirmed that the critical load Lc（ coalescent strength） of the AlN film-Si substrate is 29.45N.
出处
《硅酸盐通报》
CAS
CSCD
北大核心
2007年第5期935-938,979,共5页
Bulletin of the Chinese Ceramic Society
基金
留学回国人员科研启动基金(教外司留2001-498)
关键词
氮化铝薄膜
椭圆偏振仪
消光系数
划痕仪
结合力
aluminum nitride film
spectroscopic ellipsometry
extinction coefficient
scratch tester
coalescent strength
