摘要
测量了Ｔｅ溶液生长半磁半导体（ＳＭＳＣ）Ｃｄ１－ＭｎＴｅ的导电类型、电阻率、霍尔迁移率和光致发光（ＰＬ）．测定结果表明，Ｔｅ溶液生长Ｃｄ１－ｘＭｎｘＴｅ晶体质量和稳定性均优于布里奇曼长晶，根据正四面体配位晶场中Ｍｎ２＋３ｄ（４Ｔ１）能级出现在Ｃｄ１－ｘＭｎｘＴｅ禁带中的观点，分析了在０．８５～１．５μｍ范围内红外透射光谱上存在吸收边的原因。
The receptivity, conductive type, Hall mobility and photoluminescence (PL) of semimagnetic semiconductor (SMSC) Cd1-aMnxTe crystal films grown from Te-ricb solution were measured. All these results showed that the quality and stability of crystal films grown were better than Cd1-xMnxTe bulk crystal grown by Bridgeman technique. The cause of absorptive edge existing within 0.85 -1.5 μm range in infrared transmittance spectrum was investigated based on the viewpoint that the first excited state (4T1) of Mn2+3d in tetrahedral crystal field appeared in the bandgap of Cd1-xMnxTe crystal.
出处
《应用科学学报》
CAS
CSCD
1997年第1期107-111,共5页
Journal of Applied Sciences
关键词
溶液生长
半磁半导体
光学性质
碲锰镉半导体
Solution growth, Semimagnetic semiconductor, CdMnTe, Pbotolu minescence
