摘要
光电开关锁定（lock－on）现象自1990年报道以来已受到广泛关注，许多学者研究其机理并已开展研究将其应用到高压脉冲发生系统中，但目前所有的研究尚处于起步阶段．本文就光电开关锁定机理作了较全面的理论分析，认为光电开关的锁定是光与电联合作用的结果，耿氏效应引起场强动态增强，光脉冲产生的光电子引起本征碰撞电离，从而比较完整地解释了光电开关处于锁定状态时的增益现象．
The lock-on of photoconductive semiconductor switches (PCSS) has been reported in 1990.Although many studies have been done in utilizing the lock-on effect to the pulses forming circuit, themechanisms of lock-on is not very clear yet. This paper will describe the lock-on effect and our recentstudies to understand the effect. We will show that electric strength and the laser pulse account for thelock-on effect together. Gunn instabilities produce dynamic field enhancement, the photo-electroninduces impact ionization.
出处
《光子学报》
EI
CAS
CSCD
1997年第1期61-70,共10页
Acta Photonica Sinica
基金
国家自然科学基金
关键词
光电开关
锁定
半导体开关
Photoconductive semiconductor switches, Lock-on
