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砷化镓光导开关中流注的辐射复合系数 被引量:4

Radiative Recombination Coefficient of the Streamer in GaAs Photoconductive Semiconductor Switches
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摘要 在砷化镓样品的自发辐射现象中引入了辐射复合系数的一般概念。对于高增益砷化镓光导开关中流注的自发辐射现象,依据求简单平均值的方法和归一化条件,近似确定了平均辐射复合系数为η珔(883)≈0.1125。导出了各辐射波长的辐射复合系数与平均辐射复合系数之间的关系,计算了辐射波长为890nm的辐射复合系数值为η(890)=0.1182,代入该值计算的最大光输出能量与实验观察结果吻合,证明该近似方法及其结果是合理的。 The radiative recombination coefficient is introduced in spontaneous emission phenomena of GaAs samples. For the spontaneous emission phenomena of streamer in high gain GaAs photoconductive semiconductor switch (PCSS), the average radiative recombination coefficient, η(883) = 0. 1125, is approximately determined by the simple average method and the normalization conditions. The relationship between radiative recombination coefficients of different radiation wavelengths and the average radiative recombination coefficient is derived. The radiative recombination coefficient of 890 nm radiation, η (890) =0. 1182, is calculated. The maximum optical output energy calculated by substituting the value of η(890) coincides with the result of experimental observations. This demonstrates that the approximation method and the results are reasonable.
出处 《激光与光电子学进展》 CSCD 北大核心 2013年第5期176-179,共4页 Laser & Optoelectronics Progress
基金 四川省应用基础研究计划(2010JY0160)资助课题
关键词 光电子学 砷化镓光导开关 自发辐射 辐射复合系数 optoelectronics GaAs photoconductive semiconductor switch spontaneous emission radiative recombination coefficient
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二级参考文献130

共引文献30

同被引文献58

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