摘要
提出了一种新的两级环形振荡器结构,通过控制PMOS的衬底电压,来降低PMOS管的阈值电压,从而使新的环形振荡器可以在低电压下工作到很高的频率。仿真结果表明,在电源电压为1V,调节电压在0～1V范围内变化时,振荡器的频率为300MHz～4GHz。
A new ring oscillator was proposed. To reduce the threshold voltage of PMOS transistor, a two stage ring oscillator was designed by forward biasing the bulk of the PMOS transistor. Simulation results show that the new ring oscillator can work at the very high frequency with a low supply voltage, and the output frequency of the proposed ring oscillator can range from 300MHz to 4GHz in 1V supply voltage.
出处
《通信学报》
EI
CSCD
北大核心
2007年第6期62-65,73,共5页
Journal on Communications
基金
中国博士后科学基金资助项目
高校博士点基金资助课题~~
