摘要
本文通过测量CP—I和GB—I异质结光照前、后以及在不同温度下的I—V和C—V特性,研究了光诱导和热诱导缺陷态对两种结的光稳定性和热稳定性的影响。结果表明,GBP—I结改进了P—I结的界面特性,但都明显地受到强光和高温的影响,使结特性退化。
The influences of the light and thermal induced defects on the stability of the CP-I (common P-I) and GBP-I (graded bandgap P-I) hetero-juctions were studied by measuring I-V and C-V characteristics before and after light soaking, at different temperatures. The results show that the interface properties of GBP-I hetero junction are improved,but both GBP-I and CP-I hetero junctions are clearly influenced and degraded by light soaking and high temperature.
关键词
太阳电池
非晶硅
异质结
稳定性
Heterojunction, amorphous silicon solar cell, current-voltage (I-V) charac-teristics, capacitance-voltage (C-V) characteristics.
