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一种新型的低功耗SEU加固存储单元 被引量:5

A Novel Low Power SEU Hardened Storage Cell
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摘要 提出了一种新的SEU加固单元,该单元在保持Whitaker单元基本结构的基础上增加4个晶体管以消除电平退化.SPICE模拟结果表明该单元读写功能正确,静态电流较Whitaker单元下降了4个数量级,写入速度和其他单元相当.通过DESSIS和SPICE混合模拟表明,该单元在LET为94MeV/(mg·cm2)的Au离子撞击下没有发生翻转. A novel storage cell is proposed. Its structure is similar to Whitaker's cell, but four transistors are added to avoid voltage degradation. SPICE simulation results show that its static current drops dramatically compared with Whitaker's cell, and the write speed is equivalent to that of other cells. No upset occurs when Au ions with an LET of 94MeV/(mg· cm^2) impacts by DESSIS and SPICE mix simulation.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第5期755-758,共4页 半导体学报(英文版)
关键词 单粒子翻转 设计加固 存储单元 SEU hardening by design storage cell
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参考文献9

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同被引文献27

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