摘要
提出了一种VLSI热载流子退化的嵌入式实时预测方法,并在0.18μm CMOS混合信号工艺下完成了预测电路设计。当VLSI热载流子退化引起的瞬态性能退化超过预设的界限时,预测电路会发出一个报警信号。它只占用很小的芯片面积,同时它几乎不与被测电路共用信号(除上电复位信号和电源信号外),从而不会给被测试系统带来任何干扰。
An embedded real-time prediction method for VLSI hot-carrier degradation is presented, and its corresponding test circuit is designed based on 0. 18μm CMOS mixed signal technology. The prediction circuit is capable of issuing a warning signal when the amount of hot-carrier induced transient performance degradation exceeds a predetermined limit value. It occupies a small silicon area and does not share any signal with circuits under test （with the exception of power supply voltage and power-on reset signal）, therefore, the possibility of interference with the surrounding circuits is safely excluded.
出处
《微电子学》
CAS
CSCD
北大核心
2007年第2期180-184,共5页
Microelectronics
基金
国家"十一.五"预研基金资助项目(51308040103)
