摘要
提出了一种新型的高性能带隙基准电压源,该基准电压源采用共源共栅电流镜提供偏置电流,减少沟道长度调制效应带来的误差,并增加1个简单的减法电路,使得偏置电流更好地跟随电源电压变化,从而提高电路的电源抑制比。整体电路使用CSMC 0.6μm CMOS工艺,采用Hspice进行仿真。仿真结果表明,在-50^+100℃温度范围内温度系数为2.93×10-5℃,电源抑制比达到-84.2 dB,电源电压在3.5~6.5 V之间均可实现2.5±0.0012 V的输出,是一种有效的基准电压实现方法。
This paper proposes a new type of band-gap voltage reference. A cascode current mirror is used to produce bias currents and hence PMOS channel length modulation errors are reduced. Supply noise is suppressed by adding a simple voltage subtractor circuit. Simulation using Hspice is based on the CSMC 0. 6μm CMOS process. The results show the temperature Coefficient is 2.93×10^-5℃ between the temperature range of -50℃ to ＋100℃ and the PSR is the -84. 2 dB. The band-gap output voltage is within 2.5±0.0012 V when the supply voltage is between 3.5 V and 6.5 V.Therefore, it is an effective way to implement a band-gap voltage reference.
出处
《江南大学学报（自然科学版）》
CAS
2007年第2期185-188,共4页
Joural of Jiangnan University (Natural Science Edition)
关键词
基准电压源
温度补偿
温度系数
band-gap voltage reference
temperature compensation
temperature coefficient
