摘要
A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120μm transistors. A Wilkinson splitters and combining were used to divide and combine the power. By biasing the amplifier at VDS = 40V, IDS = 0.9A, a maximum CW output power of 41.4dBm with a maximum power added efficiency （PAE） of 32.54% and a power combine efficiency of 69% was achieved at 5.4GHz.
研制了一种基于Al GaN/GaN HEMT的功率合成技术的混合集成放大器电路.该电路包含4个10×120μm的HEMT晶体管以及一个Wilkinson功率合成器和分配器.在偏置条件为VDS=40V,IDS=0.9A时,输出连续波饱和功率在5.4GHz达到41.4dBm,最大的PAE为32.54%,并且功率合成效率达到69%.
基金
国家重点基础研究发展计划(批准号:2002CB311903)
中国科学院重点创新工程(批准号:KGCX2-SW-107)资助项目~~
