摘要
通过对传统单环LDO的频域分析,提出一种快速瞬态响应的双环路LDO稳压器结构,在保证单位增益带宽不变的前提下提高直流增益,进而提高LDO电路的瞬态性能。设计采用0.6μm BiCMOS高压工艺,Hspice仿真中输出电容为2.2μF,ESR为0.5Ω,旁路电容为1.0μF。负载电流从20 mA到180 mA变化时,其负载调整率仅为0.6%。
Based on the frequency-domain analysis of conventional single-loop LDO, a dual-loop LDO regulator structure with fast transient response is proposed, which improves dc open-loop gain while maintaining the unity gain bandwidth, thus increasing the transient response of LDO regulator. The regulator was fabricated in 0. 6 μm BiCMOS high-voltage process technology. In Hspice simulation, an output capacitance of 2. 2μF with an equivalent series resistance （ESR） of 0. 5 Ω, and a bypass capacitance of 1.0μF are obtained. With load current varying from 20 mA to 180 mA, its load regulation is only 0. 6%.
出处
《微电子学》
CAS
CSCD
北大核心
2007年第1期132-135,共4页
Microelectronics
