摘要
采用激光剥离技术结合金属熔融键合技术将生长在蓝宝石衬底上的GaN外延层转移到Si衬底上。GaN和Si表面分别用电子束蒸发Al/Ti/Au和Ti/Au/In后,在氮气环境下200℃加压实现GaN和Si的键合。采用脉冲宽度30ns、波长248nm的准分子脉冲激光透过蓝宝石衬底辐照GaN薄膜,在脉冲激光能量密度为380mJ/cm2的条件下将蓝宝石衬底剥离下来,实现GaN薄膜向Si衬底的转移。样品截面显微镜和扫描电镜(SEM)照片说明经过键合工艺形成了致密的GaN/Al/Ti/Au/In/Au/Ti/Si结构。对转移衬底后的GaN薄膜进行原子力显微镜(AFM)和光致发光谱(PL)测试,结果表明金属熔融键合和激光剥离工艺没有对GaN薄膜的结构和光学特性带来明显的不利影响。
GaN thin films grown on sapphire substrates are successfully bonded and transferred onto Si receptor substrates using fusion bonding and laser lift-off （LLO） technique. The GaN/Al2O3 structures are joined on Si substrates by pressure bonding Al/Ti/Au coated GaN surfaces onto Ti/Au/In coated Si receptor substrates at the temperature of 200℃. KrF excimer laser with 450mJ/cm^2 energy density,248nm wavelength and 25ns pulse width is used to direct through the transparent sapphire substrates to separate GaN films from sapphire substrates. Scanning electron microscope （SEM） images show that compact GaN/Al/Ti/Au/In/Au/Ti/Si structures are formed during bonding process. Atomic force microscope （AFM） and photoluminescence （PL） measurements show that the qualities of GaN films on Si substrates degrade little after substrate transfer.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2007年第1期88-90,共3页
Journal of Functional Materials
基金
国家高技术研究发展计划(863计划)资助项目(2004AA311030)
国家重点基础研究发展计划(973计划)资助项目(20000683-02)
北京市教委资助项目(2002KJ018
KZ200510005003)
北京市科委重点资助项目(D0404003040221)
关键词
激光剥离
GAN
扫描电镜
原子力显微镜
光致发光谱
laser lift-off
GaN
scanning electron microscope
atomic force microscope
photoluminescence
