摘要
介绍了新颖的MOS器件结构及鳍状FET器件研究最新进展,比较了几种主要新颖半导体器件的特性,指出了MOSFET尺寸缩小所面临的巨大挑战及解决办法,展望了器件未来发展趋势。
The progress of the novel MOSFET development and the most advanced MOSFET structure as well as the fin FET device structure were introduced. Comparison on the characteristics of several new devices was given, the great challenges and the solutions to the MOSFET scaling down were also described, the device developing trends were viewed.
出处
《半导体技术》
CAS
CSCD
北大核心
2007年第1期1-5,25,共6页
Semiconductor Technology
基金
上海市市级技术研发中心浦东新区科技局匹配资助项目(PKK2005-03)
