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杂质原子在面心立方晶体中诱发的成对挛晶 被引量:5

The coupled twins induced by impurity atom in FCC crystal
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摘要 为研究杂质原子在面心立方晶体内诱发的孪晶,采用刚性球模型进行计算研究。计算结果表明,当杂质元素的原子半径与晶体的原子半径之比约为1.65时,如果杂质原子吸附在面心立方晶体的{111}晶面上时,将可能在该{111}面上的某个[112]晶向上及与该{111}面的该[112]晶向成109.5°的另一个{111}面上的某个[112]方向上同时诱发挛晶,即诱发成对的挛晶,而不是仅仅在原来的{111}晶面上诱发一处孪晶.杂质原子诱发成对孪晶及单孪晶的的可能性各为50%. The twin induced by impurity atom in the FCC crystal was studied by calculation based on the hard sphere model. It is found by calculation that when the atomic radius ratio of the impurity to that of the matrix crystal is about 1.65, and the impurity atom is absorbed on the { 111 } plane of the FCC crystal, the impurity atom will probably induce not only one twin in a [ 112] crystallographic direction on this {111}plane, but also the second twin in another [112] crystallographic direction on another {lll } plane with an angle of 109. 5° to the first [ 112 ] crystallographic direction. Namely, the coupled twins will be induced by one impurity atom. Both of the formation possibility of the coupled twins and single twin induced by impurity atom are 50%.
出处 《材料科学与工艺》 EI CAS CSCD 北大核心 2006年第6期585-587,591,共4页 Materials Science and Technology
基金 江苏省自然科学基金资助项目(BK2004069)
关键词 成对的挛晶 面心立方 杂质原子 共晶硅 变质 coupled twins FCC impurity atom eutectic silicon modification
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参考文献10

  • 1LU Shuzu, HELLAWELL A. The mechanism of silicon modification in aluminum silicon alloys: Impurity induced twinning[J]. Metallurgical Transactions A, 1987,18A(10):1721 - 1733. 被引量:1
  • 2MAKHLOUF M M, GUTHY H V. The aluminum-sillcon eutectic reaction: mechanisms and crystallography [J].Journal of Light, 2001, 1:199 -218. 被引量:1
  • 3廖恒成,孙国雄.共晶硅变质机理研究进展[J].铸造,2003,52(12):1127-1129. 被引量:9
  • 4HANN M D, LU Shuzu, HELLAWELL A. Modification in aluminum silicon system [J]. Metallurgical Transactions A, 1984, 15A(3):459 -469. 被引量:1
  • 5LU Shuzu, HELLAWELL A. Modification of Al- Si alloys: microstructure, thermal analysis, and mechanisms[J]. JOM, 1995(2): 38-40. 被引量:1
  • 6SONG Hui, HELLAWELL A. Light Metals: Proceedings of Sessions, AIME Annual Meeting [M]. 1989. 被引量:1
  • 7SHAMSUZZOHA M, HOGAN K M, BERRY J T.Effects of modifying agents on crystallography and growth of silicon phase in Al-Si alloy [J]. AFS Transactions 1993, 154:999 - 1005. 被引量:1
  • 8DOWLING J M, CORBETT J M, WKERR H. Growth mechanisms of modified eutectic silicon [J]. Journal of Materials Science, 1987, 22: 4503 -4513. 被引量:1
  • 9LU Shu-Zu, HELLAWELL A. Light Metals: Proceedings of Sessions, TMS Annual Meeting[M], 1995. 被引量:1
  • 10HEIBERG G, ARNBERG L. Investigation of the microstructure of the Al-Si eutectic in binary aluminium - 7 wt% silicon alloys by electron backscatter diffraction (EBSD) [J]. Journal of Light Metals,2001,1:43 -49. 被引量:1

二级参考文献20

  • 1[1]Flood S C, Hunt J D. Modification of Al-Si eutectic alloys with Na [J]. Metal Sci, 1981, 15:287~294 被引量:1
  • 2[2]Lu Shu-zu, Hellawell A. Growth mechanisms of silicon in Al-Si alloys [J]. J Crystal Growth, 1985, 73:316~328 被引量:1
  • 3[3]Lu Shu-zu, Hellawell A. The mechanism of silicon modification in aluminum silicon alloys: Impurity induced twinning [J]. Metall Trans A, 1987, 18A (10): 1721~ 1732 被引量:1
  • 4[4]Lu Shu-zu, Hellawell A. Modification of Al-Si alloys: Microstructure,thermal analysis and mechanisma [J]. JOM, 1995, (2): 38~40 被引量:1
  • 5[5]Dowling J M, Corbett J M, Kerr H W. Growth mechanisms of modified eutectic silicon [J]. J Mater Sci, 1987, 22:4504~4513 被引量:1
  • 6[6]Shamsuzzoha M, Hogan L M. The crystal morphology of fibrous silicon in strontium-modified Al-Si eutectic [J]. Philosophical MagazineA, 1986, 54 (4): 459~477 被引量:1
  • 7[7]Ravi M, Pillai U T S, Pai B C. A study of the influence of mischmetal additions to Al-7Si-0.3Mg (LM25/356) alloy [J]. Metall Mater Trans A, 1996, 27A (5): 1283~ 1292 被引量:1
  • 8[8]Apelian D, Cheng J A. Al-Si processing variables: effect on grain refinement and modification [J]. AFS Trans, 1986, 94: 797~808 被引量:1
  • 9[9]Shamsuzzoha M, Hogan L M, Berry J T. Effects of modifying agents on crystallography and growth of silicon phase in Al-Si casting alloys [J]. AFS Trans, 1993, 101: 999~1005 被引量:1
  • 10[10]Zhang D L, Cantor B. Heterogeneous nucleation of solidification of Si by solid Al in hypoeutectic Al-Si alloy [J]. Metall Trans A,1993, 24A: 1195~1204 被引量:1

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