摘要
目的本研究通过绘制TE缓冲液的伏安曲线和电流一时间曲线．对芯片内TE缓冲液的伏安特性和稳定性进行了讨论。方法对高场强下TE缓冲液体系的电流变化进行监测。结果在本实验加电压范围之内（0～5000V），不同PH值的TE缓冲液在同一芯片上均显示出良好的伏安线性；在连续高场强的作用下，随着加压时间的延长．两种不同PH值的缓冲液的电流均显示出了相同的变化趋势：即在经过了一定的稳定期后．电流急速下降后又急速上升．且极不稳定。结论在以电渗流为驱动的芯片系统中，选用TE缓冲体系有着巨大的优势。另外，长时间的连续施加高电压可能会使通道内的液体性质发生改变，继而影响其内发生的生物化学反应。
Objective To examine the electrical property of TE buffer experimentally. Methods By monitoring current, V-I curve and I-T curve were mapped to discuss volt-amphere characteristic and stability in high electric field strength. Results The different pH value of TE buffers on the same chip had good volt-ampere linear region from 0V to 5 000V. Using TE buffer system had tremendous advantage in microfluidic chip electrophoresis for separation. Moreover, with the time extension of operating voltage, I-T curves of two pH value kinds of TE buffer illustrated the same trends in a high electric field strength. At the beginning, the current was stable for a certain time. After that, the current became unstable and it declined rapidly and then rose sharply. Conclusion This phenomenon showed that the nature of TE buffer possibly changed in high electric field strength for a long time, and the change would influence biochemical reactions.
出处
《重庆医学》
CAS
CSCD
2006年第20期1872-1874,共3页
Chongqing medicine
