期刊文献+

获得精细通孔图形的光刻技术改进(英文)

Improvement of Photo Process for Fine Pattern Via Hole Image
下载PDF
导出
摘要 为了获得更高性能的TFT—LCD面板,在光刻时保证精细的图形成像十分重要,其中,如何制作出尺寸更小的通孔图形是主要的问题之一。本文提供的研究中,我们只简单地改变了一下烘烤工艺,而不需要改变Eop和显影时间,就可以将通孔图形的尺寸减小20%~25oA。在后续的刻蚀工艺中,通孔的尺寸能显著减小。 To make a TFT-LCD panel which has higher performance, fine patterning process of photolithography is needed. Making smaller via pattern is one of main issue for fine patterning. In this study, normal bake process was simply changed without change of Eop and development time, thus, the size of via hole pattern can be reduced about 20 %-25 %. When etch fine patterning technique is followed, the size of via hole could be dramatically reduced.
出处 《液晶与显示》 CAS CSCD 北大核心 2006年第5期447-450,共4页 Chinese Journal of Liquid Crystals and Displays
关键词 TFT—LCD 光刻 通孔图形 尺寸 TFT-LCD photolithography via hole image size
  • 相关文献

参考文献3

  • 1Ellioltt David J. Integrated Circuit Fabrication Technology [M]. US: McGraw-Hill Book Company, 1982: (5-9): 125-242. 被引量:1
  • 2Darling R B. EE-527 Microfabrication, Photolitholgraphy [R/OL]. htttp://www.ee. washington. edu/research/microtech/cam/PROCESSES/PDF% 20FILES/Photolithography. pdf. 被引量:1
  • 3Levinson H J, Arnold W H. Handbook of Microlthography, Micromachinng and Micro fabrication [M]. US: SPIE Press, 1997 : 11-138. 被引量:1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部