摘要
利用微波吸收介电谱技术研究了KaFe（CN）6浅电子陷阱掺杂剂和S＋Au增感剂对立方体AgCl微晶光生电子衰减时间分辨特性的影响。结果表明，掺杂浓度为10^-8～10^-7mol·mol^-1 Ag时，在增感之前，掺杂位置越接近表面时，光电子衰减过程会变慢，即衰减时间增加；S＋Au增感后的掺杂乳剂中光电子衰减变快，说明了增感中心起深电子陷阱作用，当掺杂位置接近表面90％Ag时，光电子衰减时间突然减小，说明表面掺杂中心和增感中心可能发生了某些反应。
The photoelectron decay characteristic directly reflects the photographic efficiency of silver halide crystals. Measurement of the electronic decay time-resolved spectrum of silver halide microcrystals can provide important information about the photoelectron decay action in latent image formation process. In order to know the influence of shallow electron trap dopant K4Fe （CN）6 and S＋Au on photoelectron decay, the photoelectron decay time-resolved spectra of AgCl emulsion doped by K4Fe（CN） and that doped by K4Fe（CN） firstly and then sensitized by S＋Au were detected by microwave absorption dielectric technique, which can be used to study the decay process of free photoelectrons and shallow-trapped electrons in semiconductor crystals. The experimental results show that when the doping content is 10^-8-10^-7 mol·mol^-1 Ag, the photoelectron decay process becomes slower, namely, the photoelectron decay time is longer, as the doping is near the grain surface before sensitization. After S＋Au sensitization, the photoelectron decay becomes faster, showing that the sensitization centre acts as a deep electron trap. And when the doping is near the grain surface with 90%Ag, the photoelectron decay time becomes shorter, showing that the doping centre and the sensitization centre may interact.
出处
《光谱学与光谱分析》
SCIE
EI
CAS
CSCD
北大核心
2006年第9期1581-1583,共3页
Spectroscopy and Spectral Analysis
基金
国家自然科学基金(10354001)
河北省自然科学基金重点项目(603138)资助
关键词
氯化银
浅电子陷阱
S+Au增感
掺杂
光电子衰减谱
Silver chloride
Shallow electron trap
S＋Au sensitization
Doping
Photoelectron decay spectrum
