摘要
采用表面改性法制备了SiO2负载的复合半导体材料NiO-V2O5．用BET、TPR、XRD、Raman、TEM、IR和UV-Vis DRS技术对固体材料的结构和光吸收性能进行了表征．结果表明V2O5在载体表面以微晶形式存在,粒径约为10nm,NiO和V2O5复合后部分形成了Ni2+-O-V5+键联,而且NiO和V2O5在固体材料表面有相互修饰作用．NiO的加入有助于提高V2O5在载体SiO2表面的分散程度,抑制V2O5的聚合,减小微晶尺寸,而且可以增强固体材料的光吸收性能,提高复合半导体对光能的利用率．
The supported coupled-semiconductor of NiO-V2O5/SiO2 was prepared by a chemical modification method. BET, TPR, XRD, Raman, TEM, IR and UV-vis DRS techniques were used to characterize the structure and light adsorption ability of NiO-V2O5/SiO2. The results show that, V2O5 exists on the surface of silica as crystallite with the partical size about 10nm, Ni^2＋ O-V^5＋ bond forms on the surface of NiO-V2O5/SiO2, and NiO and V2O5 on the surface of support can act on each other. On the one hand, NiO can promote the dispersion of V2O5 on the surface of silica, which effectively prevents V2O5 from aggregation, diminishes the size of crystallite, moreover, NiO can expand the light absorption ability of solid material, advances its utilization to light energy.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2006年第5期1203-1208,共6页
Journal of Inorganic Materials
基金
国家重大基础研究前期研究专项(2001CCA03600)
关键词
复合半导体
五氧化二钒
氧化镍
光吸收性能
coupled semiconductor
vanadium oxide
nickel oxide
light adsorption ability
