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实用化1730nm波段掩埋结构半导体激光器的研制 被引量:1

Fabrication of Practical 1730nm Waveband Laser Diodes with Buried Heterojunction Structures
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摘要 报道了应用于医疗器械的InP基1730nm波段半导体激光器.外延片采用低压金属有机物化学气相沉积法(MOCVD)生长,有源区为5个周期的InGaAs量子阱层和InGaAsP垒层.器件采用pnpn结限制掩埋结构,有源区脊宽2μm、腔长300μm.室温下腔面镀膜后激光器管芯的阈值电流为18±5mA,8mW输出功率时的工作电流为60±5mA.采用TO封装后,100mA工作电流下激光器的输出功率大于5mW,输出波长为1732±10nm,高温恒流加速老化筛选实验表明,器件具有长期工作的可靠性,满足实用化要求. 1730nm wavelength semiconductor laser diodes(LDs) for use in medical appliances are reported. The LD structure is grown by low-pressure MOCVD, and the active region consists of five periods of InGaAs quantum wells and InGaAsP quantum barriers. The LD has a pnpn-confined buried heterojunction structure, whose ridge width and cavity length are 2μm and 300μm, respectively. After facet coating, the threshold current of the LDs is about 18 ± 5mA at room temperature, and the operating current is about 60±5mA at an output power of 8mW. For the TO-packaged LDs, the output power is over 5mW under a 100mA operating current,and the output wavelengths are 1732 ± 10nm. The results of high-temperature, constant-current accelerated aging show that the LDs are reliable over long operation periods and could have practical applications.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第8期1467-1470,共4页 半导体学报(英文版)
关键词 金属有机物化学气相沉积 半导体激光器 1730nm波段 磷化铟 MOCVD semiconductor laser diode 1730nm waveband InP
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