摘要
用MOCVD生长的未掺杂的n-Al0.3Ga0.7N制备了MSM结构紫外探测器。器件在5.3V偏压时暗电流为1nA,在315nm波长处有陡峭的截止边,在1V偏压下305nm峰值波长处探测器的电流响应率为0.023A/W,要进一步提高器件的响应率,方法之一是优化器件的结构参数,尽量减小叉指电极的宽度。为了检验Au/n-Al0.3Ga0.7N肖特基接触特性,电击穿MSM右边结,由正向I-V特性曲线计算出理想因子n～1.05,零偏势垒高度φB0～1.16eV,表明形成的Au/n-Al0.3Ga0.7N肖特基结较为理想。
A metal-semiconductor-metal ultraviolet photodetector was fabricated on undoped n-Al0.3Ga0.7N grown by metalorganic chemical vapor deposition （MOCVD）. Dark current of the device was lnA at bias of 5.3 V. The detector exhibited a sharp cutoff at 315 nm wavelength with peak responsivity of 0.023 A/W at bias of 1.0V and 305 nm. The responsivity could be further improved by Optimizing structure parameters such as decreasing the finger width. The ideality factor n of 1.05 and the zero-bias barrier height ФB0 of 1.16 eV were obtained in I-V measurement and indicated the Schottky was formed ideally.
出处
《红外技术》
CSCD
北大核心
2006年第8期470-473,共4页
Infrared Technology
