摘要
提出了具有n埋层PSOI(部分SOI)结构的射频功率LDMOS器件.射频功率LDMOS的寄生电容直接影响器件的输出特性.具有n埋层结构的PSOI射频LDMOS,其Ⅰ层下的耗尽层宽度增大,输出电容减小,漏至衬底的结电容比常规LDMOS和PSOI LDMOS分别降低39.1%和26.5%.1dB压缩点处的输出功率以及功率增益比PSOI LDMOS分别提高62%和11.6%,附加功率效率从34.1%增加到37.3%.该结构器件的耐压比体硅LDMOS提高了14%.
A novel buried n layer partial SOl RF power LDMOS is proposed. The output characteristics of the RF power LDMOS are greatly affected by the parasitic capacitance. Because the depletion width under the buried oxide layer of the proposed structure increases,the output capacitance decreases. Its drain-substrate capacitance is 39. 1% and 26. 5% less than that of the normal LDMOS and the partial SOI LDMOS respectively. At the ldB compression point,its output power and power gain are 62% and 11.6% higher than those of the partial SOI LDMOS respectively,and the power-added efficiency of the proposed structure increases from 34.1% to 37. 3%. The breakdown voltage of the proposed structure is 14% higher than that of the bulk structure.
