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碳化硅涂层的离子注入沉积改性 被引量:1

The Modification of Silica Carbide Coating by Plasma Immersion Ion Implantation and Deposition
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摘要 采用全方位离子注入和沉积(PlasmaImmersionIonImplantationandDeposition,PIII&D),在SiC涂层表面形成注入沉积改性层(改性元素Al和Si),观察了离子注入和沉积对涂层表面裂纹的封填情况,分析了离子注入和沉积后涂层表面的相组成,考核了离子注入和沉积对SiC-C/SiC材料抗氧化性能的影响。实验结果表明:注入Al再注入沉积Si改性后显著降低复合材料在1300℃空气中的氧化质量损失,提高了复合材料的抗氧化能力,边注入边沉积Al和同时全方位沉积Al和Si改性对复合材料抗氧化性能改善作用较小,边注入边沉积Si改性改善复合材料抗氧化性能的作用最小。 CVD SiC coating is implanted with AI and Si by PⅢ&D respectively. The effect of ion implantation on sealing cracks of SiC coating is observed by SEM and the phase presented in the coating surface are analyzed by XRD. Oxidation is conducted in simulated air at 1300℃ for 15 hours to evaluate the effect of ion implantation on oxidation resistance of the coating. Tests indicate that after oxidation in air at 130℃ the weight loss of the MEVVA AI/PIID Si modified composite decreases, the oxidation resistance property of the coposite is modified, the oxidation resistance of the PⅢ&D AI and PIID AI &Si composite is less modified, and the oxidation resistance of the PⅢ&D Si composite is least modified.
出处 《材料导报》 EI CAS CSCD 北大核心 2006年第7期138-140,共3页 Materials Reports
基金 国家自然科学基金(90405015) 国家杰出青年科学基金(50425208)
关键词 碳/碳化硅复合材料 碳化硅涂层 离子注入和沉积 抗氧化 carbide/silicon carbide composite,silicon carbide coating, ion implantation and deposition,oxidation resistance
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