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等离子体法制备SiC超细粉的研究进展 被引量:5

Development of Making SiC Ultrafine Powder by Plasma Process
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摘要 综述了用等离子体法制备碳化硅超细粉的进展,并将制备方法归纳为固-固、固-气和气-气反应法。评述了研究者为提高SiC的纯度而作的努力。 In this paper,the progress of preparing SiC ultrafine powder by using plasma process is reviewed,and the preparing methods are summed up as solid-solid,solid-gas,and gas-gas reacting processes. Attempts of researchers to im-prove the purity of SiC are commented.
机构地区 浙江大学材料系
出处 《材料导报》 EI CAS CSCD 1996年第2期34-37,共4页 Materials Reports
关键词 等离子体 碳化硅 超细粉 陶瓷 plasma,SiC,ultrafine powder
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参考文献3

  • 1F. Allaire,L. Parent,S. Dallaire. Production of submicron SiC particles by d.c. thermal plasma: a systematic approach based on injection parameters[J] 1991,Journal of Materials Science(15):4160~4165 被引量:1
  • 2Yasufumi Nariki,Yasunobu Inoue,Kohichi Tanaka. Production of ultra fine SiC powder from SiC bulk by arc-plasma irradiation under different atmospheres and its application to photocatalysts[J] 1990,Journal of Materials Science(7):3101~3104 被引量:1
  • 3K. Kijima,H. Noguchi,M. Konishi. Sintering of ultrafine SiC powders prepared by plasma CVD[J] 1989,Journal of Materials Science(8):2929~2933 被引量:1

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