摘要
SiGe BiCMOS提供了性能极其优异的异质结晶体管(HBT),其ft超过70 GHz,β>120,并具有高线性、低噪声等特点,非常适合高频领域的应用。基于SiGe BiCMOS工艺,提出了一种高性能全差分超高速比较器。该电路由宽带宽前置放大器和改进的主从式锁存器组成,采用3.3 V单电压源,比较时钟超过10 GHz,差模信号电压输入量程为0.8 V,输出差模电压0.4 V,输入失调电压约2.5 mV;工作时钟10 GHz时,用于闪烁式A/D转换器可以达到5位的精度。
SiGe BiCMOS technology can provide high performance HBT＇s, which have excellent linearity（IP3）, low noise figure （NFmin）, and ultrahigh speed （ft≈70 GHz）. A 5-bit fully differential comparator based on SiGe BiCMOS process is presented, which consists of a preamplifier with wide bandwidth, and improved master/slave latches. The eomparator achieves a full-scale differential input range of 0. 8 V, a differential output of 0. 4 V, an input offset voltage of about 2. 5 mV, and a maximum clock frequency over 10-GHz with a single 3.3TV power supply. When operating at 10 GHz clock frequency, it can produce a 5-bit resolution in flash A/D converters.
出处
《微电子学》
CAS
CSCD
北大核心
2006年第2期192-196,共5页
Microelectronics
基金
国家自然科学基金资助项目(60476046)
国家部委基金资助项目(51408010304DZ0140)
